By Peter W. Epperlein
This reference booklet presents an absolutely built-in novel method of the improvement of high-power, single-transverse mode, edge-emitting diode lasers via addressing the complementary issues of equipment engineering, reliability engineering and machine diagnostics within the comparable booklet, and therefore closes the space within the present e-book literature.
Diode laser basics are mentioned, through an problematic dialogue of problem-oriented layout directions and methods, and by means of a scientific remedy of the origins of laser degradation and a radical exploration of the engineering skill to reinforce the optical power of the laser. balance standards of serious laser features and key laser robustness components are mentioned besides transparent layout issues within the context of reliability engineering methods and versions, and common courses for reliability exams and laser product skills. Novel, complex diagnostic tools are reviewed to debate, for the 1st time intimately in e-book literature, functionality- and reliability-impacting components reminiscent of temperature, pressure and fabric instabilities.
Further key positive aspects include:
- practical layout instructions that contemplate additionally reliability comparable results, key laser robustness components, uncomplicated laser fabrication and packaging issues;
- detailed dialogue of diagnostic investigations of diode lasers, the basics of the utilized methods and methods, a lot of them pioneered by means of the writer to be fit-for-purpose and novel within the application;
- systematic perception into laser degradation modes similar to catastrophic optical harm, and quite a lot of applied sciences to extend the optical power of diode lasers;
- coverage of simple ideas and strategies of laser reliability engineering with info on a customary advertisement excessive strength laser reliability attempt program.
Semiconductor Laser Engineering, Reliability and Diagnostics displays the wide services of the writer within the diode laser box either as a most sensible medical researcher in addition to a key developer of high-power hugely trustworthy units. With helpful functional recommendation, this new reference e-book is suited for working towards researchers in diode laser applied sciences, and to postgraduate engineering students.
Dr. Peter W. Epperlein is expertise advisor along with his personal semiconductor expertise consulting company Pwe-PhotonicsElectronics-IssueResolution within the united kingdom. He seems to be again at a thirty years profession in leading edge photonics and electronics industries with specialise in rising applied sciences, either in international and start-up businesses, together with IBM, Hewlett-Packard, Agilent applied sciences, Philips/NXP, Essient Photonics and IBM/JDSU Laser firm. He holds Pre-Dipl. (B.Sc.), Dipl. Phys. (M.Sc.) and Dr. rer. nat. (Ph.D.) levels in physics, magna cum laude, from the collage of Stuttgart, Germany.
Dr. Epperlein is an the world over well-known specialist in compound semiconductor and diode laser applied sciences. He has complete R&D in lots of gadget parts akin to semiconductor lasers, LEDs, optical modulators, quantum good units, resonant tunneling units, FETs, and superconducting tunnel junctions and built-in circuits. His pioneering paintings on refined diagnostic study has ended in many world’s first experiences and has been followed through different researchers in academia and undefined. He authored greater than seventy peer-reviewed magazine papers, released greater than ten invention disclosures within the IBM Technical Disclosure Bulletin, has served as reviewer of diverse proposals for ebook in technical journals, and has gained 5 IBM study department Awards. His key achievements comprise the layout and fabrication of high-power, hugely trustworthy, unmarried mode diode lasers.
Chapter 1 simple Diode Laser Engineering ideas (pages 3–100):
Chapter 2 layout issues for High?Power unmarried Spatial Mode Operation (pages 101–210):
Chapter three simple Diode Laser Degradation Modes (pages 213–243):
Chapter four Optical energy Engineering (pages 245–279):
Chapter five uncomplicated Reliability Engineering innovations (pages 281–324):
Chapter 6 Diode Laser Reliability Engineering application (pages 325–353):
Chapter 7 Novel Diagnostic Laser facts for lively Layer fabric Integrity; Impurity Trapping results; and replicate Temperatures (pages 361–408):
Chapter eight Novel Diagnostic Laser facts for replicate aspect affliction results; Mechanical pressure results; and aspect Coating Instability (pages 409–431):
Chapter nine Novel Diagnostic facts for varied Laser Temperature results; Dynamic Laser Degradation results; and reflect Temperature Maps (pages 433–467):
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Extra info for Semiconductor Laser Engineering, Reliability and Diagnostics: A Practical Approach to High Power and Single Mode Devices
Examples for a ternary are Alx Ga1−x As made up of the binaries GaAs and AlAs, and for a quaternary In1−x Gax Asy P1−y with GaAs, GaP, InAs, and InP as the constituents. 11 illustrates the correlation between bandgap energy and lattice constant for different binary, ternary, and quaternary compound semiconductors (Kressel and Butler, 1977; Casey and Panish, 1978). 55 μm where the highest optical output powers have been demonstrated. 78 μm for optical data storage, laser printers, and machining.
55 μm are of particular interest, where the standard silica ﬁber has minima in total dispersion and loss, respectively. 067y2 . 35 eV for InP. , 2000). , 1992). 3 μm and to replace InGaAsP lasers with their thermal problems (low thermal conductivity, high electron escape due to low conduction band offset). , 1996, 1997). , 2000). , 1999). The higher electron mass, however, leads to transparency current densities roughly three times higher than for 980 nm InGaAs QW lasers. r AlGaInP diode lasers are now well established to cover roughly the wavelength range of 600 to 700 nm in the visible red.
R The wavelength regime of 900–1100 nm can only be covered by the strainedlayer system Inx Ga1−x As sandwiched between AlGaAs or GaAs layers as discussed in the last section. The indium ion is larger than the gallium ion and therefore InGaAs has a higher lattice constant than GaAs with the consequence that InGaAs is under compressive strain. For layer thicknesses below a critical thickness the mismatch strain can be accommodated elastically without forming misﬁt dislocations, and the resulting biaxial compression modiﬁes the valence band structure of InGaAs such that efﬁcient inversion now occurs also in the valence bands leading to increased gain.